PhD Student, Electrical & Computer Engineering
University of Minnesota, Twin Cities
Advised by
Prof. Yu (Kevin) Cao,
MEC Group
I work on generative AI for chip thermal and power simulation, and on using it to drive more efficient thermal management. The aim is real-time temperature and power prediction, accurate enough to support hotspot-triggered dynamic power management on chip rather than thermal information that only arrives after an offline solve.
Before joining Minnesota I worked on algorithm-based device reliability and compact modeling at Peking University. I have 11 publications to date, 4 as first or co-first author, in journals and conferences including Nature and IEEE T-ED.
A hot-emitter transistor based on stimulated emission of heated carriers
Nature Nature 632(8026), 782–787, 2024 · Co-first author · Paper
Dynamic Modeling of Parametric Shifts in FinFETs Under Hot Carrier Degradations
IEEE T-ED IEEE Transactions on Electron Devices 73(1), 63–70, 2025 · Paper
A Dynamic Time Evolution Method for Accelerating Self-Heating Simulations of Advanced Technologies
IEEE T-ED IEEE Transactions on Electron Devices, 2025 · Paper
Cross-Layer Modeling and Simulation for Electrothermal-Reliability With Backside Power Delivery Networks
IEEE JEDS IEEE Journal of the Electron Devices Society, 2025 · Paper
A Neural Network Approach for Parameterizations of Hot Carrier Degradation Models
IEEE JEDS IEEE Journal of the Electron Devices Society 13, 756–761, 2024 · Paper
A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology
IEEE T-ED IEEE Transactions on Electron Devices 71(1), 206–212, 2023 · Paper
A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs
Nanomaterials Nanomaterials 13(9), 1507, 2023 · Paper
A neural network based fast parameter extraction of compact hot carrier degradation model in FinFETs
EDTM 2024 IEEE Electron Devices Technology & Manufacturing Conference, 1–3, oral · Paper
Modeling the Temperature-Dependence of Silicon Diode with Fermi-Dirac Statistics down to 50K
ISEDA 2024 International Symposium of Electronics Design Automation, 37–41 · Paper
New insights into the interface trap generation during hot carrier degradation: Impacts of full-band electronic resonance, (100) vs (110), and nMOS vs pMOS
IEDM 2023 IEEE International Electron Devices Meeting, 1–4 · Paper
Investigation of the temperature dependence of Bulk-Si TFET and MFSB-TFET by TCAD simulation
ICSICT 2022 IEEE International Conference on Solid-State & Integrated Circuit Technology · Paper
# Equal contribution · ∗ Corresponding author
Parameter extraction methods for aging models of semiconductor devices
Chinese Patent
A modeling and simulation prediction method for aging effects in semiconductor devices
Chinese Patent